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| Data Sheet 250 mW EPITAXIAL PLANAR DIODES Mechanical Dimensions JEDEC D0-35 .060 .090 .120 .200 1.00 Min. Description 1N914 .018 .022 Features n PLANAR PROCESS n 250 mW POWER DISSIPATION n INDUSTRY STANDARD D0-35 PACKAGE n MEETS UL SPECIFICATION 94V-0 1N914 Maximum Ratings Peak Reverse Voltage...VRM RMS Reverse Voltage...VR(rms) Average Forward Rectified Current...IO Non-Repetitive Peak Forward Surge Current...IFSM Power Dissipation...PD Operating Temperature Range...TJ Storage Temperature Range...TSTRG Electrical Characteristics Maximum Forward Voltage...VF @ IF = 100 mA Maximum DC Reverse Current...IR @ VR = 70v Maximum Frequency ...f Maximum Diode Capacitance, VR = 6V, f = 1MHz...CD Maximum Reverse Recovery Time...tRR .01 uF PVV = 100nS 5K Ohms 50 Ohms RG = 50 Ohms Page 8-2 1N914 80 80 Units Volts Volts ............................................. 100 ............................................... mAmps ............................................. 300 ............................................... mAmps mW ............................................. 250 ............................................... C ......................................... -25 to 85 .......................................... C ......................................... -55 to 125 .......................................... ............................................. 1.2 ............................................... ............................................. ............................................. ............................................. ............................................. 0.1 100 3.5 4.0 Volts ............................................... Amps ............................................... MHz pF ............................................... ns ............................................... Test Device Under Test Output IF IR Trr 0.1 IR |
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